Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc Layers
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Theory ofand () surfacesPhysical Review B, 1996
- Substrate Engineering With Plastic Buffer LayersMRS Bulletin, 1996
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on SapphireJapanese Journal of Applied Physics, 1996
- Novel symmetry in the growth of gallium nitride on magnesium aluminate substratesApplied Physics Letters, 1996
- A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor depositionJournal of Electronic Materials, 1995
- On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on SapphireMRS Proceedings, 1995
- The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor depositionJournal of Applied Physics, 1994
- High resolution transmission electron microscopy studies of the Ag/MgO interfaceActa Metallurgica et Materialia, 1992
- Physics at SurfacesPublished by Cambridge University Press (CUP) ,1988
- Insignificance of Lattice Misfit for EpitaxyJournal of Vacuum Science and Technology, 1970