On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport propertiesJournal of Electronic Materials, 1995
- Doping of gallium nitride using disilaneJournal of Electronic Materials, 1995
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Native defects in gallium nitridePhysical Review B, 1995
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1994
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Theory of Electron Galvanomagnetics in Crystals: Hall Effect in Semiconductors and SemimetalsPhysica Status Solidi (b), 1973
- Semiconductor StatisticsPublished by Elsevier ,1962