Native defects in gallium nitride
- 15 June 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (23) , 17255-17258
- https://doi.org/10.1103/physrevb.51.17255
Abstract
The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms. N vacancy introduces a shallow donor level, and may be responsible for the n-type character of as-grown GaN. Due to the wide gap of nitrides, self-compensation effects strongly reduce both n-type and p-type doping efficiencies due to the formation of gallium vacancy and interstitial Ga, respectively.Keywords
This publication has 12 references indexed in Scilit:
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Thin films and devices of diamond, silicon carbide and gallium nitridePhysica B: Condensed Matter, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Point-defect energies in the nitrides of aluminum, gallium, and indiumPhysical Review B, 1992
- Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusionPhysical Review Letters, 1991
- Analysis of separable potentialsPhysical Review B, 1991
- Role of native defects in wide-band-gap semiconductorsPhysical Review Letters, 1991
- Pseudopotentials that work: From H to PuPhysical Review B, 1982
- Properties of VPE-grown GaN doped with Al and some iron-group metalsJournal of Applied Physics, 1979
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969