Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimes

This publication has 13 references indexed in Scilit:

• A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's
  IEEE Transactions on Electron Devices, 1986
• Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique
  Solid-State Electronics, 1986
• Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
  IEEE Transactions on Electron Devices, 1984
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Submicrometer MOSFET structure for minimizing hot-carrier generation
  IEEE Transactions on Electron Devices, 1982
• Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
  IEEE Transactions on Electron Devices, 1980
• Determination of interface and bulk-trap states of IGFET’s using deep-level transient spectroscopy
  Journal of Applied Physics, 1976
• Carrier-density fluctuations and the IGFET mobility near threshold
  Journal of Applied Physics, 1975
• Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
  IEEE Transactions on Electron Devices, 1975
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967