Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of ${\mathrm{C}}_{60}$ and pentacene. Three types of device structures in the ${\mathrm{C}}_{60}$ ∕pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of ${\mathrm{C}}_{60}$ and pentacene, the mobility $\mu$ in $p$ -channel operation was estimated to be $6.8\times {10}^{-2}{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ , while the $\mu$ in $n$ -channel operation was $1.3\times {10}^{-3}{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ . This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.