Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System

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Abstract
In order to clarify the mechanisms of film formation in an atmospheric-pressure chemical vapor deposition reactor using the tetraethylorthosilicate/O3/He system, the contents of C, H, and SiO2 in the intermediate species were estimated from both CHN elemental chemical component and thermogravimetric analyses of simultaneously generated nanometer-sized particles. From the results of compositional analysis of intermediate species and SEM observation of resultant films, the intermediate species which form films with excellent flow-like shape were found to contain relatively large amounts of ethoxy group and small amounts of hydroxyl group.