White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy
- 23 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (25) , 4546-4548
- https://doi.org/10.1063/1.1585138
Abstract
We have observed extremely wide spectral range electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates at room temperature. The InAs QDs were grown by droplet heteroepitaxy using a low-pressure organometallic vapor phase epitaxial system. Room-temperature EL in a very wide wavelength range from 950 to 2200 nm was observed from InAs QDs embedded in InP matrix. The wide range emission indicates that the QDs have white optical gain in the infrared region at room temperature, which can be applied to efficient optical amplifiers for 1.0–1.6 μm fiber communication.Keywords
This publication has 11 references indexed in Scilit:
- Role of the wetting layer in the carrier relaxation in quantum dotsApplied Physics Letters, 2002
- Wavelength tuning of InAs quantum dots grown on (311)B InPApplied Physics Letters, 1999
- Structural and optical characterization of InAs nanostructures grown on high-index InP substratesJournal of Crystal Growth, 1999
- Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)Applied Physics Letters, 1998
- Effect of matrix on InAs self-organized quantum dots on InP substrateApplied Physics Letters, 1998
- High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -Semiconductor Science and Technology, 1998
- Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)Applied Physics Letters, 1997
- Formation of InAs islands on InP (001) by droplet hetero-epitaxyApplied Surface Science, 1997
- InAs self-assembled quantum dots on InP by molecular beam epitaxyApplied Physics Letters, 1996
- Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxyApplied Physics Letters, 1995