Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
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- 15 December 2006
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 314 (5806) , 1757-1761
- https://doi.org/10.1126/science.1133734
Abstract
We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.Keywords
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This publication has 24 references indexed in Scilit:
- Helical Liquid and the Edge of Quantum Spin Hall SystemsPhysical Review Letters, 2006
- Stability of the quantum spin Hall effect: Effects of interactions, disorder, andtopologyPhysical Review B, 2006
- Quantum Spin Hall Effect in GraphenePhysical Review Letters, 2005
- Nondissipative Spin Hall Effect via Quantized Edge TransportPhysical Review Letters, 2005
- Band structure of semimagneticquantum wellsPhysical Review B, 2005
- Observation of the Spin Hall Effect in SemiconductorsScience, 2004
- Spin-Hall InsulatorPhysical Review Letters, 2004
- Band structure and its temperature dependence for type-III superlattices and their semimetal constituentPhysical Review B, 2000
- Chern-Simons currents and chiral fermions on the latticePhysics Letters B, 1993
- Quantized Hall Conductance in a Two-Dimensional Periodic PotentialPhysical Review Letters, 1982