Transverse junction vertical-cavity surface-emitting laser
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1736-1738
- https://doi.org/10.1063/1.105125
Abstract
An all‐epitaxial, transverse‐junction GaAs/AlGaAs vertical‐cavity surface‐emitting laser (TJ‐VCSEL) incorporating wavelength‐resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p+‐p‐n+ transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room‐temperature threshold of 48 mA (pulsed) and a resolution‐limited spectral width of 0.11 nm at a 855.8 nm lasing wavelength.Keywords
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