Submilliamp threshold vertical-cavity laser diodes
- 15 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1605-1607
- https://doi.org/10.1063/1.103361
Abstract
We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth-power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.Keywords
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