Chemical vapor deposition of ZnS: Mn electroluminescent films in a low-pressure halogen transport system
- 2 March 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (3) , 381-394
- https://doi.org/10.1016/0022-0248(91)90274-9
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- Electroluminescence from films of ZnS:Mn prepared by organometallic chemical vapor depositionIEEE Transactions on Electron Devices, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- The dependences of electroluminescent characteristics of ZnS:Mn thin films upon their device parametersJournal of Applied Physics, 1981
- Low pressure deposition of polycrystalline silicon from silaneJournal of Crystal Growth, 1981
- Epitaxial growth of ZnS on GaP by Zn-S-H2 CVD methodJournal of Crystal Growth, 1981
- Epitaxial Growth of Cubic ZnS x Se1 − x by Vapor Phase TransportJournal of the Electrochemical Society, 1980
- Transport kinetics in horizontal ZnS epitaxial growth systemsJournal of Crystal Growth, 1978
- The epitaxial growth of thick smooth films of ZnS on GaAsJournal of Crystal Growth, 1975
- Dependence of growth temperature on carrier gas velocity in open tube transportJournal of Crystal Growth, 1972