Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L151
- https://doi.org/10.1143/jjap.24.l151
Abstract
The epitaxial realignment of CVD deposited and As+ ion-implanted poly-Si layers on (100) Si substrates has been investigated by both plan-view and cross-section TEM observations. High density annealing twins, running parallel to orientations on {111} planes, remain in epitaxially regrown films, although epitaxial realignment is realized for 1.5×1016 As+/cm2 implanted samples annealed at 1150°C for 30 s. The perfectness of a regrown film is shown by crystal lattice imaging in high-resolution electron microscopy from a cross-section sample. High-resolution TEM also reveals the existence of precipitates at the interface between the regrown film and the substrate.Keywords
This publication has 5 references indexed in Scilit:
- The poly-single crystalline silicon interfaceJournal of Applied Physics, 1984
- Effectiveness of polycrystalline silicon diffusion sourcesApplied Physics Letters, 1983
- Grain‐Growth Mechanisms in PolysiliconJournal of the Electrochemical Society, 1982
- Epitaxial alignment of polycrystalline Si films on (100) SiApplied Physics Letters, 1980
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978