Effectiveness of polycrystalline silicon diffusion sources
- 15 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (10) , 960-962
- https://doi.org/10.1063/1.94166
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layersNuclear Instruments and Methods in Physics Research, 1982
- Arsenic profiles in bipolar transistors with polysilicon emittersSolid-State Electronics, 1981
- Arsenic-implanted polysilicon layersApplied Physics A, 1981
- Epitaxial alignment of polycrystalline Si films on (100) SiApplied Physics Letters, 1980
- The SIS tunnel emitter: A theory for emitters with thin interface layersIEEE Transactions on Electron Devices, 1979
- Arsenic implantation into polycrystalline silicon and diffusion to silicon substrateJournal of Applied Physics, 1977