High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layers
- 1 September 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 200 (2-3) , 499-504
- https://doi.org/10.1016/0167-5087(82)90476-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Calculation of the backscattering-channeling surface peakSurface Science, 1978
- Nuclear reaction analysis of 16O concentration profiles with a high-resolution magnetic spectrometerNuclear Instruments and Methods, 1978
- The rotating sample technique for measurement of random backscattering yields from crystals and its application to β-aluminaNuclear Instruments and Methods, 1978
- The application of high-resolution Rutherford backscattering techniques to near-surface analysisNuclear Instruments and Methods, 1978