Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition
- 20 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (20) , 2294-2296
- https://doi.org/10.1063/1.104903
Abstract
Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (−22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7−δ/BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.Keywords
This publication has 14 references indexed in Scilit:
- Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser depositionJournal of Applied Physics, 1990
- Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser depositionApplied Physics Letters, 1990
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Y1Ba2Cu3O7−x thin films grown on sapphire with epitaxial MgO buffer layersApplied Physics Letters, 1990
- Low-temperature growth of MgO by molecular-beam epitaxyPhysical Review B, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990
- Heteroepitaxial Si/Al2O3/Si structuresApplied Physics Letters, 1989
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989
- Silicon surface passivation by hydrogen termination: A comparative study of preparation methodsJournal of Applied Physics, 1989
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986