Heteroepitaxial growth of Y2O3 films on silicon
- 24 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (4) , 360-361
- https://doi.org/10.1063/1.102420
Abstract
Yttria (Y2 O3 ) films have been grown on Si (100) and Si (111) substrates heated at 800 °C by vacuum evaporation. X‐ray diffraction and reflection high‐energy electron diffraction observations reveal the heteroepitaxial growth of Y2 O3 films on Si (100) and Si (111) substrates. The (111) oriented Y2 O3 films are grown directly on Si (111) substrates. The (100) oriented Y2 O3 films are grown on the thin (Y2 O3 )0.09 (ZrO2 )0.91 layer predeposited on Si (100) substrates instead of direct growth on Si (100) substrates.Keywords
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