Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition

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Abstract
The superstructures at the insulator/semiconductor interface were observed for the first time by grazing incidence X-ray diffraction. The insulating AlN was deposited on the n-GaAs(001) substrate by the metalorganic chemical vapor deposition utilizing TMA and N2H4 as source gases in a H2 ambient gas at a pressure of 0.1 atm. At the beginning of AlN deposition at 220°C, either TMA or N2H4 was initially introduced before both of them were supplied together, resulting in two different diffraction patterns. For the TMA case, the diffraction pattern showed a 1×4 superstructure and for the N2H4 case, on the other hand, the diffraction pattern showed a 1×6 superstructure. It is suggested that superstructures should appear even at a pressure of 0.1 atm of a H2 gas.