X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interface
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (11) , 6927-6933
- https://doi.org/10.1063/1.325845
Abstract
A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single‐crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.This publication has 2 references indexed in Scilit:
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- CXVII. The total reflexion of X-raysJournal of Computers in Education, 1923