Study of the thermal conversion of semi-insulating GaAs:Cr with cathodoluminescence, photoluminescence, and secondary ion mass spectrometry

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Abstract
Low-temperature cathodoluminescence and photoluminescence spectra of heat-treated GaAs:Cr are compared and differences are attributed to the difference in excitation depth. Cathodoluminescence spectra at 30 K indicate that the 1.23-eV emission band in the as-grown GaAs:Cr may be associated with a SiGa-VGa complex while emission bands in the heat-treated materials at 1.363 and 1.407 eV may correspond to acceptor levels introduced through the site transfer of silicon. The 1.363-eV peak is strongly correlated with carrier concentration of the converted layer. Secondary ion mass spectrometry depth profiles show that this peak is not due to Cu. It may be due to recombination involving a SiAs-VGa complex.