Thermal degradation of homoepitaxial GaAs interfaces
- 1 January 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (1) , 1-3
- https://doi.org/10.1063/1.89215
Abstract
Photoluminescence techniques have been used to detect and characterize p‐type conducting layers formed on the surface of semi‐insulating GaAs substrates and at the liquid phase epitaxial layer–GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm−3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.Keywords
This publication has 10 references indexed in Scilit:
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976
- Photoluminescence of the Cr accepotr in boat-grown and LPE GaAsJournal of Applied Physics, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973
- Interpretation of anomalous layers at GaAs n+−n− step junctionsSolid State Communications, 1970
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969
- Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in-Type GaAsPhysical Review B, 1969
- Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial ProcessJapanese Journal of Applied Physics, 1968
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate InterfaceJapanese Journal of Applied Physics, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967