An alternative expression for the impact ionisation coefficient in a semiconductor derived using lucky drift theory
- 10 June 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (16) , L477-L481
- https://doi.org/10.1088/0022-3719/18/16/007
Abstract
Lucky drift theory is used to derive an alternative expression for the impact ionisation coefficient in a semiconductor to that given by B.K. Ridley (1983). This alternative expression has a simple physical interpretation. It also agrees well with a Monte Carlo simulation for a model semiconductor.Keywords
This publication has 4 references indexed in Scilit:
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