Surface and Interface Morphology of Small Islands of TiSi2 and ZrSi2 ON (001) Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3–50Å) followed by an anneal at high temperatures (700–1200 °C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8Å, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.Keywords
This publication has 5 references indexed in Scilit:
- Nucleation and Morphology of TiSi2 on SiMRS Proceedings, 1992
- Comparison of the Interface and Surface Morphologies of Zirconium and Titanium Silicides on SiliconMRS Proceedings, 1992
- Infrared response from metallic particles embedded in a single-crystal Si matrix: The layered internal photoemission sensorApplied Physics Letters, 1990
- Atomic scale study of local TiSi2/Si epitaxiesJournal of Applied Physics, 1990
- Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted schemeApplied Physics Letters, 1985