Nucleation and Morphology of TiSi2 on Si

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Abstract
This study explores the nucleation and surface and interface morphology of TiSi2 films formed on Si (100) and (111) surfaces. Titanium suicide films were formed on atomically clean Si(111) and (100) surfaces by UHV deposition of Ti followed by in situ anneals. The TiSi2 formation process was characterized is itu using AES and LEED, and the interface structure was determined post preparation by HRTEM. The metastable C49 and stable C54 TiSi2 phases have been identified from Raman spectroscopy measurements. The islands were partially recessed into the substrate, and the shape and degree of recession was different for the islands on (111) and (100) substrates. On (111) substrates epitaxial islands were observed which exhibited different interface structures and epitaxial alignments. The contact angles of the islands were measured and the surface and interface energies of the different configurations were deduced. The mechanisms pertaining to island formation and interface morphology are described in terms of the wetting properties of a liquid-liquid system, with the effects of interface structures causing deviations from the model.