Very low temperature MBE process for SiGe and Si device structures

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01631918,p. 558-561
https://doi.org/10.1109/iedm.1988.32876

Abstract

The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime (<550 degrees C). The lowest epitaxial temperature achieved was 140 degrees C. Results on matrix growth, metastability of strained-layer SiGe, and doping are given, and the structure and characteristics of two hetero-devices (MODFET and resonant tunneling element) are examined.

Keywords

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