The n-channel SiGe/Si modulation-doped field-effect transistor
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5) , 633-638
- https://doi.org/10.1109/t-ed.1986.22544
Abstract
At the heterointerface of Si1-xGex/Si the existence of two-dimensional carrier gas has recently been demonstrated. The electrons are confined inside the large-gap material Si. We report the first fabrication of n-channel modulation-doped SiGe/Si hetero field-effect transistors by use of molecular-beam epitaxial growth. Though neither layer sequence nor parasitic resistances were optimized, these first transistors exhibit an extrinsic transconductance of 40 mS/mm for a gate length of 1.6 µm. This value is higher than that of conventional Si MESFET's of comparable carrier concentration. Technological processing steps and device evaluation are described.Keywords
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