Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures

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1 July 1985

journal article
research article
Published by Springer Nature in Applied Physics A

Vol. 37 (3) , 139-143
https://doi.org/10.1007/bf00617498

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures
Applied Physics Letters, 1985
Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric field
Applied Physics Letters, 1984
High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
Applied Physics Letters, 1984
Molecular Beam Epitaxy of GaAs and AlGaAs for Optoelectronic Devices and Modulation Doped Heterostructures
Published by Springer Nature ,1984
High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface
Applied Physics Letters, 1980