High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
- 1 June 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (11) , 1064-1066
- https://doi.org/10.1063/1.94644
Abstract
Selectively doped n:AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy, employing a slow growth technique, at a substrate temperature of 600 °C. The effect of the undoped AlGaAs spacer thickness on carrier density and Hall mobility was investigated. Mobilities as high as 9200, 200 000, and 1 060 000 cm2/Vs at 300,77, and 4.2 K, respectively, were measured in the dark for a spacer thickness of ∼180 Å and an areal carrier density of ∼2.2×1011 cm−2. Surprisingly, samples with spacer thicknesses of 80 Å had 4‐K mobilities of ∼800 000 cm2/Vs, higher than expected theoretically from the structural parameters.Keywords
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