Quiescent operating point shift in bipolar transistors with AC excitation
- 1 December 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (6) , 1087-1094
- https://doi.org/10.1109/jssc.1979.1051320
Abstract
No abstract availableKeywords
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- A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the deviceIEEE Transactions on Electron Devices, 1965
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