A new type of Schottky tunnel transistor
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10) , 412-414
- https://doi.org/10.1109/55.320985
Abstract
A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I/sub k/ vs. cathode voltage V/sub k/ curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.Keywords
This publication has 4 references indexed in Scilit:
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier JunctionJapanese Journal of Applied Physics, 1994
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier JunctionJapanese Journal of Applied Physics, 1992
- Sub-half-micrometer concave MOSFET with double LDD structureIEEE Transactions on Electron Devices, 1992
- Tunneling in Schottky Barrier RectifiersPublished by Springer Nature ,1969