A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10B) , L1467
- https://doi.org/10.1143/jjap.31.l1467
Abstract
A new type of tunnel-effect transistor, which has nearly the same structure as conventional metal-oxide-silicon field-effect transistors (MOSFET's) except for a Schottky barrier source contact and a low resistivity channel layer, has been proposed. The structure has the advantage of an easy fabrication process and is capable of submicron channel length without the short channel effect. In the proposed device the drain current is controlled by the gate bias through the tunnel injection of electrons at the Schottky barrier source contact. A 2-D device simulation has shown that this device can have a high transconductance of 138 mS/mm at a drain voltage of 2 V.Keywords
This publication has 10 references indexed in Scilit:
- Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETsSolid-State Electronics, 1991
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- On the physics and modeling of small semiconductor devices—IISolid-State Electronics, 1980
- Tunnel triode—a tunneling base transistorApplied Physics Letters, 1977
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Tunnel transistorProceedings of the IEEE, 1973
- SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drainProceedings of the IEEE, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Theory of TunnelingJournal of Applied Physics, 1961