Ion implantation and luminescence

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Abstract
For insulators, the relationship between ion implantation and luminescence has been reviewed. Luminescence has been shown to be an important technique in the study of ion implanted layers and implantation mechanisms and the value of implantation doping in producing luminescence centres or devices has been discussed. Some particular topics have been chosen and considered to illustrate the useful relationship between luminescence and implantation. Cathodoluminescence studies have been used to investigate the importance of various implantation parameters in implantation doping. Identification of luminescence centres from post-implantation annealing treatments has led to an understanding of the lattice sites occupied by the implanted ions. The method of using optically-detected magnetic resonance (ODMR) to investigate implanted ions and the damage occurring during implantation has been illustrated by reference to phosphorus implantation in zinc selenide. The significance of depth-resolved cathodoluminescence in implantation studies has been briefly considered. Finally, the advantages of ion implantation in studying the role played by impurities in the radiation dosimeter material LiF are outlined.