Low-voltage ZnO thin-film transistors with high-KBi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics
- 22 July 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (4)
- https://doi.org/10.1063/1.1993762
Abstract
We report on the fabrication of field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-KBi1.5Zn1.0Nb1.5O7 (BZN) as the gate insulator. The devices exhibited very low operation voltages (80% for wavelength >400nm), low-temperature processing, and low operation voltage of ZnO-based thin-film transistors with integrated BZN dielectric offer a promising route for the development of transparent and flexible electronics.Keywords
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