The germanium insulated-gate field-effect transistor (FET)
- 1 March 1965
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 53 (3) , 316-317
- https://doi.org/10.1109/proc.1965.3715
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of Low Temperature Annealing on the Surface Conductivity of Si in the Si-SiO2-Al SystemIBM Journal of Research and Development, 1964
- EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p-TYPE SILICONApplied Physics Letters, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Modulation of Conductance of Thin Films of Semi-Conductors by Surface ChargesPhysical Review B, 1948