1W/mm power pseudomorphic HFET with optimised recesstechnology
- 26 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (11) , 904-906
- https://doi.org/10.1049/el:19940593
Abstract
The authors report record DC characteristics and RF performances of a power double heterostructure (DH) pseudomorphic (PM) InGaAs quantum well HFET. The device, with a 0.3 × 70 µm2 gate, exhibits an intrinsic transconductance as high as 720 mS/mm, a maximum current density of ~1 A/mm and delivers a state-of-the-art output power density of 1 W/mm with 5.7 dB linear gain and 38% power added efficiency at 33 GHz. A detailed analysis of the technological aspects and electrical characteristics of the device is proposed to explain these excellent performances.Keywords
This publication has 4 references indexed in Scilit:
- An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applicationsIEEE Transactions on Microwave Theory and Techniques, 1993
- Dependence of ionization current on gate bias in GaAs MESFETsIEEE Transactions on Electron Devices, 1993
- Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mmIEEE Electron Device Letters, 1991
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988