Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (6) , 327-328
- https://doi.org/10.1109/55.82076
Abstract
AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFETs of 0.3- mu m gate length with both excellent DC and RF performances are reported. A maximum unilateral gain cutoff frequency of 170 GHz and a maximum current gain cutoff frequency of 60 GHz are achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.Keywords
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