Multiple quantum well AlGaAs/GaAs field-effect transistor structures for power applications

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Abstract
Room-temperature properties of modulation-doped AlGaAs/GaAs field-effect transistor structures with three quantum wells are investigated. For channel spacings of 31 nm and doping levels of about 1.4×1012 cm−2 per barrier layer the individual channels are continuously controllable. For a spacing of 50 nm and doping excess of 2×1012 cm−2 it is shown that the channels remain under velocity saturation but conduction sets on at markedly different gate voltages and so the channels are controlled consecutively. Because of very high current density of up to 500 mA/mm, high transconductance, low source resistance, and output conductance close to zero, the multiple quantum well field-effect transistors are excellent candidates for power devices in the millimeter wave range.