Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si
- 1 July 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (7) , 1028-1036
- https://doi.org/10.1007/bf02659898
Abstract
No abstract availableKeywords
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