Deformation-induced point defects in germanium
- 1 July 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 48 (1) , 55-61
- https://doi.org/10.1080/13642818308226431
Abstract
Using a transient capacitive method (deep-level transient spectroscopy), we have studied defects introduced into n-type germanium by plastic deformation at temperatures below 0·6T m (where T m is the melting temperature). From the annealing behaviour of a defect with a level at E c - 0·29 eV, we conclude that point-defect clouds surround the dislocation formed during plastic deformation, and that these anneal out at high temperatures.Keywords
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