Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 1902-1907
- https://doi.org/10.1116/1.589576
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The selective epitaxial growth of siliconMaterials Science and Engineering: B, 1993
- Fundamental studies on the selective epitaxial growth of silicon-based filmsChemical Engineering Science, 1992
- Fully planar method for creating adjacent ‘‘self-isolating’’ silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowthApplied Physics Letters, 1992
- Physical and chemical kinetic processes in the CVD of silicon from SiH2Cl2/H2 gaseous mixtures in a vertical cylindrical hot-wall reactorJournal of Crystal Growth, 1991
- SOI design for competitive CMOS VLSIIEEE Transactions on Electron Devices, 1990
- The dependence of silicon selective epitaxial growth rates on masking oxide thicknessJournal of Applied Physics, 1989
- High-speed, low-power, implanted-buried-oxide CMOS circuitsIEEE Electron Device Letters, 1986
- Three-dimensional IC trendsProceedings of the IEEE, 1986
- A mechanism and kinetics of silicon growthJournal of Crystal Growth, 1985
- Rate-determining reactions and surface species in CVD of silicon: II. The SiH2Cl2-H2-N2-HCL systemJournal of Crystal Growth, 1980