Sequential reactions of SiD+2 with SiD4
- 15 March 1992
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 96 (6) , 4429-4439
- https://doi.org/10.1063/1.462834
Abstract
The thermal (300 K) reaction of SiD+2 with SiD4 proceeds at greater than the Langevin collision rate (21±3×10−10 cm3/molecule s ). The reaction products SiD+3, Si2D+2, and Si2D+4 are produced in a 54:7:39 ratio. Both silicon isotope exchange and adduct (Si2D+6) formation are −7 Torr. The branching ratio for SiD+3 formation increases with increasing internal energy of SiD+2. Sequential reactions of SiD+3 and Si2D+2 with SiD4 have been previously found to produce terminal species containing five silicon atoms. Si2D+4 reacts with SiD4 only by silicon isotope exchange at 2.0±0.7% of the collision rate (0.20±0.07×10−10 cm3/molecule s ) with no evidence of other reactions (+2 with SiD4 does not lead to unconstrained clustering and particle formation in silane plasmas. High level ab initio calculations on this system are reported by Raghavachari in his companion paper. Energies of the critical intermediates and transition states along the reaction surface are compared quantitatively to the experimental results via phase space calculations. The energies agree to within 6 kcal/mol.Keywords
This publication has 18 references indexed in Scilit:
- Sequential reactions of SiH+2 with silane: A theoretical studyThe Journal of Chemical Physics, 1992
- Sequential clustering reactions of SiD+ with SiD4: Rapid growth to kinetic dead-end structuresThe Journal of Chemical Physics, 1991
- Sequential clustering reactions of SiD+3 with SiD4 and SiH+3 with SiH4: Another case of arrested growth of hydrogenated silicon particlesThe Journal of Chemical Physics, 1990
- Sequential reactions of bare silicon clusters with SiD4: Constrained heterogeneous nucleation of deuterated silicon particlesThe Journal of Chemical Physics, 1989
- A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous siliconJournal of Applied Physics, 1988
- Sequential clustering reactions of Si+ with SiD4: Identification of a bottleneck preventing rapid growth of hydrogenated silicon particlesThe Journal of Chemical Physics, 1988
- Sequential clustering reactions of Si+ with silane: A theoretical study of the reaction mechanismsThe Journal of Chemical Physics, 1988
- On the Decomposition of Silane in Plasma Deposition ReactorsIEEE Transactions on Plasma Science, 1986
- Ion chemistry in silane dc dischargesJournal of Applied Physics, 1985
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984