Direct evidence for the existence of BAsimpurity antisite centres in GaAs
- 20 April 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (11) , L301-L304
- https://doi.org/10.1088/0022-3719/17/11/001
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Boron impurity anti-site defects in p-type gallium-rich gallium arsenideJournal of Physics C: Solid State Physics, 1983
- Host isotope fine structure of local modes: C and Si in GaAsJournal of Physics C: Solid State Physics, 1982
- Direct evidence for the site of substitutional carbon impurity in GaAsApplied Physics Letters, 1982
- Concept of Force Variation Due to Charged Defects in Elemental and Compound SemiconductorsPhysica Status Solidi (b), 1980
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- The detection of strain in neutron irradiated gallium arsenide from local mode absorption measurementsPhilosophical Magazine, 1977
- The behaviour of boron impurities in n-type gallium arsenide and gallium phosphideJournal of Physics C: Solid State Physics, 1974
- Localized vibrational modes in gallium arsenide containing silicon and boronJournal of Physics C: Solid State Physics, 1972
- Boron and carbon impurities in gallium arsenideSolid State Communications, 1972