The detection of strain in neutron irradiated gallium arsenide from local mode absorption measurements
- 1 June 1977
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 35 (6) , 1689-1695
- https://doi.org/10.1080/14786437708232991
Abstract
Neutron irradiation of doped gallium arsenide leads to an increase in the width of the infrared absorption line associated with localized vibrations of SiGa donors. This effect is attributed to the presence of strain around the disordered regions associated with primary collisions. The strain anneals at temperatures above 250°C. The limitations of this optical probing technique are discussed and a comparison is made with earlier work on neutron irradiated silicon host crystals.Keywords
This publication has 7 references indexed in Scilit:
- The strength of the infrared absorption from silicon donors and silicon acceptors in gallium arsenideJournal of Physics C: Solid State Physics, 1976
- An optical study of defects in silicon irradiated with fast neutronsJournal of Physics C: Solid State Physics, 1975
- The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenideAdvances in Physics, 1975
- The effect of irradiation-induced lattice strain on the width of local mode absorption lines in siliconJournal of Physics C: Solid State Physics, 1975
- AES studies of arsenic vacancies in (
- Infrared absorption of mixed silicon isotope pairs in gallium arsenideJournal of Applied Physics, 1974
- The vibrations of an atom of different mass in a cubic crystalProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963