AES studies of arsenic vacancies in () GaAs annealed surfaces
- 15 July 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (2) , 199-202
- https://doi.org/10.1016/0038-1098(74)90740-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Investigation of surface states on the polar (111) and () faces of GaAs by photoelectron spectroscopySolid State Communications, 1973
- Luminescence of arsenic vacancy-related defects in GaAsJournal of Physics and Chemistry of Solids, 1973
- Vacancy Association of Defects in Annealed GaAsApplied Physics Letters, 1971
- LEED, Auger, and work function studies of clean and Na-covered surfaces of GaAsSurface Science, 1971
- EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAsApplied Physics Letters, 1970
- Auger Electron Spectroscopy of Clean Gallium ArsenideJournal of Applied Physics, 1970
- Evidence for carbon contamination on vacuum heated surfaces by electron paramagnetic resonanceSurface Science, 1970
- Adsorption and Desorption of O2 on GaAs {111} SurfacesJournal of Applied Physics, 1967
- Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSbSurface Science, 1966
- Low-Energy Electron-Diffraction Study of the Cleaved (110) Surfaces of InSb, InAs, GaAs, and GaSbJournal of Applied Physics, 1964