The effect of irradiation-induced lattice strain on the width of local mode absorption lines in silicon
- 7 March 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (5) , 589-598
- https://doi.org/10.1088/0022-3719/8/5/007
Abstract
Samples of silicon doped with oxygen alone, or with oxygen and carbon have been irradiated with fast neutrons up to a maximum dose of 1020 cm-2. It is shown that there is a progressive decrease in the resolution of the fine structure of the 9 mu m band due to oxygen, and a corresponding increase in the width of the band at 12 mu m due to (O-V)0 centres. These measurements have also been made on samples containing group III and/or group V impurities; the degree of disorder in these samples is greater showing that there are important impurity effects. These results are compared with the structure of the 9 mu m band found in silicon after implantation with 400 keV oxygen ions.Keywords
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