Interstitial defects involving carbon in irradiated silicon
- 21 January 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (2) , 243-248
- https://doi.org/10.1088/0022-3719/8/2/017
Abstract
Room temperature irradiation by either 2 MeV electrons or fast neutrons of silicon containing carbon and oxygen leads to the displacement of substitutional carbon into interstitial sites. These interstitials are mobile and some combine with oxygen impurities to form C(3) centres. The latter centres are themselves destroyed once the concentration of substitutional carbon becomes negligible. It is proposed that C(3) centres act as nucleation sites for the aggregation of intrinsic interstitials.Keywords
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