Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 discharges
- 1 June 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 69 (2) , 201-216
- https://doi.org/10.1016/0040-6090(80)90037-1
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputteringThin Solid Films, 1980
- Mechanisms of the reactive- and chemical-sputter deposition of TiO2 from Ti and TiC targets in mixed Ar+O2 dischargesJournal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Optical spectroscopy for diagnostics and process control during glow discharge etching and sputter depositionJournal of Vacuum Science and Technology, 1978
- Growth of metastable InSb1−xBix thin films by multitarget sputteringApplied Physics Letters, 1978
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977
- Energy distributions of electrons in electron-beam-produced nitrogen plasmasJournal of Applied Physics, 1976
- The behaviour of surfaces under ion bombardmentReports on Progress in Physics, 1975
- Glow Discharge Optical Spectroscopy for Monitoring Sputter Deposited Film ThicknessJournal of Vacuum Science and Technology, 1973
- Reactive sputtering of metals in oxidizing atmospheresThin Solid Films, 1973