High quality InGaAsN growth by MOVPE using N/sub 2/ carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsineApplied Physics Letters, 1997
- Low pressure MOVPE of GaN and heterostructuresJournal of Crystal Growth, 1997