Projected Range Distribution of Implanted Ions in a Double-Layer Substrate

This publication has 6 references indexed in Scilit:

• Threshold voltage and ``gain'' term β of ion-implanted enhancement-mode n-channel MOS transistors
  Applied Physics Letters, 1973
• Physical Profile Measurements in Insulating Layers Using the Ion Analyser
  Published by Springer Nature ,1973
• Range Distribution Theory Based on Energy Distribution of Implanted Ions
  Journal of Applied Physics, 1972
• A complementary MOS 1.2 volt watch circuit using ion implantation
  Solid-State Electronics, 1972
• THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION
  Applied Physics Letters, 1971
• MOS field effect transistors formed by gate masked ion implantation
  IEEE Transactions on Electron Devices, 1968