p-type zinc-blende GaN on GaAs substrates
- 16 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (7) , 932-933
- https://doi.org/10.1063/1.109848
Abstract
We report p‐type cubic GaN. The Mg‐doped layers were grown on vicinal (100) GaAs substrates by plasma‐enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron‐cyclotron resonance source. p‐type zinc‐blende‐structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x‐ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.Keywords
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