On the origin of free carriers in high‐conducting n‐GaN
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (3) , 383-390
- https://doi.org/10.1002/crat.2170180314
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Photoluminescence of GaN epitaxial layersJournal of Physics C: Solid State Physics, 1982
- A kinetic model for the incorporation of dopants during vapour phase epitaxy of III–V compoundsJournal of Crystal Growth, 1982
- Variation of lattice parameters with growth conditions in GaNPhysica Status Solidi (a), 1980
- Stoichiometry and doping in large gap compound semiconductorsRevue de Physique Appliquée, 1980
- Variation of lattice parameters in GaN with stoichiometry and dopingPhysical Review B, 1979
- Element incorporation in vapour grown III–V compoundsJournal of Crystal Growth, 1977
- Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3Journal of Crystal Growth, 1974
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs LayersJapanese Journal of Applied Physics, 1971